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| IGBT MODULE CIRCUIT SixSix-Pack 100A 600V OUTLINE DRAWING PTMB100A6 12- fasten- tab No 110 Dimension(mm) Approximate Weight : 550g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PTMB100A6 600 +/ - 20 100 200 400 -40 to +150 -40 to +125 2500 2 1.4 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 10000 0.15 0.25 0.2 0.45 Max. 1.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 Unit mA A V V pF s FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 100 200 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=100A/s Min. - Max. 2.4 0.25 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.31 0.65 PTMB100A6 Fig.1- Output Characteristics (Typical) 200 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 16 TC=25 VGE=20V 12V IC=40A 200A Collector to Emitter Voltage V CE (V) 15V 10V 14 12 10 8 6 4 2 0 100A Collector Current I C (A) 150 100 9V 50 8V 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 300 250 200 16 TC=125 IC=40A 200A Collector to Emitter Voltage V CE (V) 100A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE (V) 14 RL=3 TC=25 14 Gate to Emitter Voltage VGE (V) 12 10 8 VCE=300V 150 6 200V 100 100V 50 0 4 2 0 0 4 8 12 16 20 0 100 200 300 400 Gate to Emitter Voltage VGE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 50000 20000 10000 1 Fig.6- Collector Current vs. Switching Time (Typical) VCC=300V RG=7.5 VGE=15V TC=25 Cies Coes Cres VGE=0V f=1MHZ TC=25 0.9 0.8 Switching Time t (s) Capacitance C (pF) 5000 2000 1000 500 200 100 50 0.2 0.5 1 2 5 10 20 50 100 200 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 toff ton tf tr 100 Collector to Emitter Voltage VCE (V) Collector Current IC (A) PTMB100A6 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 200 (Typical) TC=25 180 160 2 VCC=300V IC=100A VG=15V TC=25 TC=125 Switching Time t (s) Forward Current I F (A) toff ton 1 140 120 100 80 60 40 tr 0.5 tf 0.2 0.1 20 0.05 1 10 100 0 0 1 2 3 4 Series Gate Impedance RG () Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 1000 Fig.10- Reverse Bias Safe Operating Area (Typical) 500 200 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=100A TC=25 200 RG=7.5 VGE=15V TC125 Collector Current I C (A) trr 100 100 50 20 10 5 2 1 0.5 0.2 50 20 10 IRrM 5 0 100 200 300 400 500 600 0.1 0 200 400 600 800 -di/dt (A/s) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 1 (/W) 5x10 -1 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 FRD IGBT Transient Thermal Impedance Rth (J-C) TC=25 2x10 -3 1x10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 1 Shot Pulse 1 10 1 Time t (s) |
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